 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SHINDENGEN Schottky Rectifiers (SBD) Dual D4SC6M 60V 4A FEATURES *oe Tj150*Z *oe PRRSM avalanche guaranteed *oe Fully Isolated Molding APPLICATION *oe Switching OUTLINE DIMENSIONS Case : ITO-220 Unit : mm power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 60 V Repetitive Peak Surge Reverse Voltage width 0.5ms, duty 1/40 VRRSM Pulse 65 V Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode, Io/2, Tc=138*Z IO 4 A Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value,60 Tj=125*Z A Repetitive Peak Surge Reverse Power PRRSM Pulse width 10Es, Rating of per diode, Tj= 25*Z330 W Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 kV Mounting Torque TOR (Recommended torque*0.3Nm) F 0.5 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF IF =2A, Pulse measurement, Rating of per diode Max.0.58 V Reverse Current IR V =V Pulse measurement, Rating of per diode Max.2 mA R RM, Junction Capacitance =10V, Rating of per diode Cj f=1MHz,R V Typ.120 pF Thermal Resistance AEjc junction to case Max.3.3 *Z/W E AEcf case to heatsink, Mounting torque=5kg* cm Max.1.5 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D4SC6M Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D4SC6M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] D4SC6M 1000 Reverse Current 100 Tc=150C [MAX] Tc=150C [TYP] Reverse Current IR [mA] 10 Tc=125C [TYP] Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] D4SC6M 12 Reverse Power Dissipation DC D=0.05 0.1 0.2 Reverse Power Dissipation PR [W] 10 8 0.3 6 0.5 4 SIN 0.8 2 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D4SC6M 5 Forward Power Dissipation Forward Power Dissipation PF [W] 4 D=0.8 SIN 0.2 0.05 0.1 0.3 0.5 DC 3 2 1 0 0 1 2 3 4 5 6 7 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D4SC6M 8 Derating Curve Average Rectified Forward Current IO [A] 7 DC 6 5 0.5 4 3 2 1 0 SIN 0.3 0.2 0.1 0.05 D=0.8 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 30V 0 0 IO VR tp D=tp /T T D4SC6M 8 Derating Curve Average Rectified Forward Current IO [A] 7 DC 6 5 0.5 4 3 2 1 0 SIN 0.3 0.2 0.1 0.05 D=0.8 0 20 40 60 80 100 120 140 160 Heatsink Temperature Tf [C] VR = 30V 0 0 IO VR tp D=tp /T T D4SC6M 100 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 80 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
Price & Availability of D4SC6M
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |